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| SS32-SS315 SCHOTTKY BARRIER RECTIFIERS PRODUCT SUMMARY 3.0 AMPS Surface Mount SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) FEATURES For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C / 10 seconds at terminals .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .063(1.6) .039(1.0) .320(8.13) .305(7.75) .008(.20) .004(.10) MECANICAL DATA Case: JEDEC DO-214AB Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.21gram o Dimensions in inches and (millimeters) Pb-free; RoHS-compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS 32 Maximum Recurrent Peak Reverse Voltage VRRM 20 Maximum RMS Voltage 14 VRMS Maximum DC Blocking Voltage 20 VDC Type Number SS 33 30 21 30 SS 34 40 28 40 SS 35 50 35 50 3.0 SS 36 60 42 60 SS 39 90 63 90 SS 310 100 70 100 SS Units 315 150 V 105 V 150 V A Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 3.0A @ 25oC @ 100oC o Maximum DC Reverse Current @ TA =25 C at o Rated DC Blocking Voltage @ TA=125 C Typical Thermal Resistance ( Note 2 ) I(AV) IFSM VF IR 100 70 A V mA mA o 0.5 0.4 0.5 10 0.75 0.65 5 17 55 0.85 0.95 0.70 0.80 0.1 0.5 R JL R JA Operating Temperature Range TJ -55 to +125 Storage Temperature Range TSTG Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle C/W o o -55 to +150 -55 to +150 C C 04/05/2007 Rev.1.00 www.SiliconStandard.com 1 SS32-SS315 RATINGS AND CHARACTERISTIC CURVES (SS32 THRU SS315) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3 100 FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 80 SS35-SS315 2 SS32-SS34 60 1 40 20 PCB MOUNTED ON 0.6X0.6" (16X16mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 o 130 140 150 160 01 LEAD TEMPERATURE. ( C) 10 NUMBER OF CYCLES AT 60Hz 100 FIG.3- TYPICAL FORWARD CHARACTERISTICS 40 TJ=25 0C FIG.4- TYPICAL REVERSE CHARACTERISTICS 20 10 TJ=125 0C SS35-SS36 INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. (mA) 10 SS32-SS34 1 1 TJ=75 0C 0.1 SS39-SS310 0.1 0.01 SS315 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=25 0C SS32-SS34 SS35-SS315 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 20 40 60 80 100 120 140 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE TJ=25 0C f=1.0MHz Vsig=50mVp-p FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSCIENT THERMAL IMPEDANCE, ( oC/W) 100 100 1000 JUNCTION CAPACITANCE.(pF) 10 100 1 SS32-SS34 SS35-SS36 SS39-SS315 10 0.1 1 10 0.1 0.01 0.1 1 t, PULSE DURATION, (sec) 10 100 REVERSE VOLTAGE. (V) Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 04/05/2007 Rev.1.00 www.SiliconStandard.com 2 |
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